november 1997 - revised january 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp4xxxf3lm overvoltage protector series tisp4072f3lm thru tisp4082f3lm, tisp4125f3lm thru tisp4180f3lm, tisp4240f3lm thru tisp4380f3lm bidirectional thyristor overvoltage protectors t r sd4xaa terminals t and r correspond to the alternative line designators of a and b lmf package (lm package with formed leads) (top view) device v drm v v (bo) v 4072 58 72 4082 66 82 4125 100 125 4150 120 150 4180 145 180 4240 180 240 4260 200 260 4290 220 290 4320 240 320 4380 270 380 how to order lm package (top view) ion-implanted breakdown region precise and stable voltage low voltage overshoot under surge rated for international surge wave shapes device symbol these devices are designed to limit overvoltages on the telephone line. overvoltages are normally caused by a.c. power system o r lightning flash disturbances which are induced or conducted on to the telephone line. a single device provides 2-point protection and is typically used for the protection of 2-wire telecommunication equipment (e.g. between the ring to tip wires for telephones and modems). combin ations of devices can be used for multi-point protection (e.g. 3-point protection between ring, tip and ground). the protector consists of a symmetrical voltage-triggered bidirectional thyristor. overvoltages are initially clipped by breakd own clamping until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. this low-voltage on s tate causes the current resulting from the overvoltage to be safely diverted through the device. the high crowbar holding current prevents d.c. latchup as the diverted current subsides. description .............................................. ul recognized component nc - no internal connection on pin 2 nc t(a) r(b) md4xat 1 2 3 nc - no internal connection on pin 2 nc t(a) r(b) md4xakb 1 2 3 device package carrier tisp4xxxf3lm straight lead do-92 (lm) bulk pack tape and reeled formed lead do-92 (lmf) tape and reeled tisp4xxxf3lm-s tisp4xxxf3lmr-s tisp4xxxf3lmfr - s insert xxx value corresponding to protection voltages of 072, 082, 125 etc. order as *rohs directive 2002/95/ec jan 27 2003 including annex * r o h s c o m p l i a n t waveshape standard i tsp a 10/160 s fcc part 68 60 0.5/700 s i3124 38 10/700 s itu-t k.20/21 50 10/560 s fcc part 68 45 10/1000 s rea pe-60 35
november 1997 - revised january 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. description (continued) tisp4xxxf3lm overvoltage protector series rating symbol value unit repetitive peak off-state voltage (0 c < t j < 70 c) 4072 4082 4125 4150 4180 4240 4260 4290 4320 4380 v drm 58 66 100 120 145 180 200 220 240 270 v non-repetitive peak on-state pulse current (see notes 1, 2 and 3) i tsp a 2/10 s (fcc part 68, 2/10 s voltage wave shape) excluding 4072 - 4082 175 8/20 s (ansi c62.41, 1.2/50 s voltage wave shape) excluding ?072 - ?082 120 10/160 s (fcc part 68, 10/160 s voltage wave shape) 60 5/200 s (vde 0433, 2 kv, 10/700 s voltage wave shape) 50 0.2/310 s (i3124, 1.5 kv, 0.5/700 s voltage wave shape) 38 5/310 s (itu-t k.20/21, 1.5 kv, 10/700 s voltage wave shape) 38 5/310 s (ftz r12, 2 kv, 10/700 s voltage wave shape) 50 10/560 s (fcc part 68, 10/560 s voltage wave shape) 45 10/1000 s (rea pe-60, 10/1000 s voltage wave shape) 35 2/10 s (fcc part 68, 2/10 s voltage wave shape) ?072 - ?082 only 80 8/20 s (ansi c62.41, 1.2/50 s voltage wave shape) ?072 - ?082 only 70 non-repetitive peak on-state current (see notes 2 and 3) i tsm 4a 50/60 hz, 1 s initial rate of rise of on-state current, linear current ramp, maximum ramp value < 38 a di t /dt 250 a/ s junction temperature t j -40 to +150 c storage temperature range t stg -55 to +150 c notes: 1. initially the tisp must be in thermal equilibrium with 0 c november 1997 - revised january 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp4xxxf3lm overvoltage protector series parameter test conditions min typ max unit r ja junction to free air thermal resistance eia/jesd51-3 pcb mounted in an eia/ jesd51-2 enclosure 120 c/w thermal characteristics electrical characteristics for r and t terminals, t j = 25 c (unless otherwise noted) parameter test conditions min typ max unit i drm repetitive peak off- state current v d = v drm , 0 c < t j < 70 c 10 a v (bo) breakover voltage dv/dt = 250 v/ms, r source = 300 ? 4072 4082 4125 4150 4180 4240 4260 4290 4320 4380 72 82 125 150 180 240 260 290 320 380 v v (bo) impulse breakover voltage dv/dt = 1000 v/ s, r source = 50 ? di/dt < 20 a/ s 4072 4082 4125 4150 4180 4240 4260 4290 4320 4380 86 96 143 168 198 267 287 317 347 407 v i (bo) breakover current dv/dt = 250 v/ms, r source = 300 ? 0.15 0.6 a v t on-state voltage i t = 5a, t w = 100 s 3v i h holding current i t = 5a, di/dt=-/+30ma/ms 0.15 a dv/dt critical rate of rise of off-state voltage linear voltage ramp, maximum ramp value < 0.85v drm 5kv/ s i d off-state current v d = 50 v 10 a c off off-state capacitance f = 100 khz, v d =1v r.m.s., v d =0, f = 100 khz, v d =1v r.m.s., v d =-50v 4072 - 4082 4125 - 4180 4240 - 4380 4072 - 4082 4125 - 4180 4240 - 4380 63 43 44 25 15 11 108 74 74 40 25 20 pf
november 1997 - revised january 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp4xxxf3lm overvoltage protector series parameter measurement information figure 1. voltage- current characteristic for r and t terminals all measurements are referenced to the t terminal -v v drm i drm v d i h i t v t i tsm i tsp v (bo) i (bo) i d quadrant i switching characteristic +v +i v (bo) i (bo) v drm i drm v d i d i h i t v t i tsm i tsp -i quadrant iii switching characteristic pmxxaab
november 1997 - revised january 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp4xxxf3lm overvoltage protector series typical characteristics figure 2. figure 3. figure 4. figure 5. t j - junction temperature - c -25 0 25 50 75 100 125 150 i d - off-state current - a 0 001 0 01 0 1 1 10 100 tc4xaa v d = -50 v v d = 50 v t amin - minimum ambient temperature - c -40 -35 -30 -25 -20 -15 -10 -5 0 derating factor 0.95 0.96 0.97 0.98 0.99 1.00 tc4xab '4125 thru '4180 '4072 and '4082 '4240 thru '4380 v t - on-state voltage - v 23456789 11 i t - on-state curren t - a 1 10 100 tc3mal -40 c 150 c 25 c t a - ambient temperature - c -25 0 25 50 75 100 125 150 v (bo) normalized to 25 c value 0.9 1.0 1.1 tc4xac '4240 thru '4380 '4072 and '4082 '4125 thru '4180 '4240 thru '4380 '4072 and '4082 t j - junction temperature - c -25 0 25 50 75 100 125 150 normalized holding current 0.4 0.5 0.6 0.7 0.8 0.9 1.5 2.0 1.0 tc4xad off-state current vs junction temperature normalized v (bo) vs ambient temperature normalized holding current vs junction temperature v drm derating factor vs minimum ambient temperature
november 1997 - revised january 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp4xxxf3lm overvoltage protector series typical characteristics figure 6. figure 7. figure 8. figure 9. di/dt - rate of rise of principal current - a/ s 0 001 0 01 0 1 1 10 100 normalized breakover voltage 1.0 1.1 1.2 1.3 tc4xae '4240 thru '4380 '4072 and '4082 '4125 thru '4180 positive polarity di/dt - rate of rise of principal current - a/ s 0 001 0 01 0 1 1 10 100 normalized breakover voltage 1.0 1.1 1.2 1.3 tc4xaf '4240 thru '4380 '4072 and '4082 '4125 thru '4180 negative polarity terminal voltage - v 0 1 1 10 off-state capacitance - pf 20 30 40 50 60 70 80 90 10 100 tc4xag 50 '4240 thru '4380 '4072 and '4082 '4125 thru '4180 positive polarity terminal voltage - v 0 1 1 10 off-state capacitance - pf 20 30 40 50 60 70 80 90 10 100 tc4xah 50 '4240 thru '4380 '4072 and '4082 '4125 thru '4180 negative polarity normalized breakover voltage vs rate of rise of principle current normalized breakover voltage vs rate of rise of principle current off-state capacitance vs terminal voltage off-state capacitance vs terminal voltage
november 1997 - revised january 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp4xxxf3lm overvoltage protector series typical characteristics figure 10. t - current duration - s 0 1 1 10 100 1000 i tsm(t) - non-repetitive peak on-state current - a 2 3 4 5 6 7 8 9 1 10 ti4laaa v gen = 600 vrms, 50/60 hz r gen(t) = 1.4*v gen / i tsm(t) non-repetitive peak on-state current vs current duration
november 1997 - revised january 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. devices are shipped in one of the carriers below. a reel contains 2,000 devices. tisp4xxxf3lm overvoltage protector series device symbolization code device symbolization code tisp4072f3 4072f3 tisp4082f3 4082f3 tisp4125f3 4125f3 tisp4150f3 4150f3 tisp4180f3 4180f3 tisp4240f3 4240f3 tisp4260f3 4260f3 tisp4290f3 4290f3 tisp4320f3 4320f3 tisp4380f3 4380f3 mechanical data carrier information devices will be coded as below. ?isp?is a trademark of bourns, ltd., a bourns company, and is registered in u.s. patent and trademark office. ?ourns?is a registered trademark of bourns, inc. in the u.s. and other countries. device package carrier tisp4xxxf3lm straight lead do-92 (lm) bulk pack tape and reeled formed lead do-92 (lmf) tape and reeled tisp4xxxf3lm-s tisp4xxxf3lmr-s tisp4xxxf3lmfr -s insert xxx value corresponding to protection voltages of 072, 082, 125 etc. order as
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